Stress retention in fins of fin field-effect transistors

ABSTRACT

Embodiments of the present invention provide a structure and method of minimizing stress relaxation during fin formation. Embodiments may involve forming a looped spacer on an upper surface of a substrate and adjacent to at least a sidewall of a mandrel. The mandrel may be removed, leaving the looped spacer on the substrate. An exposed portion of the substrate may be removed to form a looped fin below the looped spacer. The spacer may be removed, leaving a looped fin. A looped fin formation may reduce stress relaxation compared to conventional fin formation methods. Embodiments may include forming a gate over a looped portion of a looped fin. Securing a looped portion in position with a gate may decrease stress relaxation in the fin. Thus, a looped fin with a looped portion of the looped fin under a gate may have substantially reduced stress relaxation compared to a conventional fin.

BACKGROUND

The present invention relates generally to microelectronics and moreparticularly, to a structure and method of retaining stress in fins offin field-effect transistors (finFETs).

Intrinsic stress in a fin of a finFET may boost mobility of chargecarriers, and thus, increase performance of the finFET. Cutting anintrinsically stressed semiconductor layer to form fins may reduce theintrinsic stress in a fin compared to the semiconductor layer. Areduction in stress from cutting a fin may result in lost finFETperformance.

SUMMARY

According to an embodiment, a method is disclosed. The method mayinclude forming a looped spacer around a first portion of a mandrel onan upper surface of a substrate. The looped spacer may be adjacent to afirst sidewall of the first portion of the mandrel, an inner edge of thefirst portion of the mandrel, and a second sidewall of the first portionof the mandrel. The method may include removing the first portion of themandrel. The method may include removing an exposed portion of thesubstrate. Removing the exposed portion of the substrate may form thelooped fin below the looped spacer. The method may include removing thelooped spacer. The method may include forming a gate on the uppersurface of the substrate and on a looped portion of the looped fin.

According to an embodiment, another method is disclosed. The method mayinclude forming a mandrel on an upper surface of a semiconductor oninsulator (SOI) layer. The SOI layer may include a dielectric layer on afirst semiconductor layer and a second semiconductor layer on thedielectric layer. The method may include removing a portion of themandrel down to the upper surface of the second semiconductor layer.Removing the portion of the mandrel may produce a first remainingportion of the mandrel and a second remaining portion of the mandrel.The method may include forming a looped spacer on the upper surface ofthe second semiconductor layer around an inner region of the firstremaining portion of the mandrel. The inner region may include a firstsidewall extending vertically from the SOI layer, an inner edgeextending vertically from the SOI layer, and a second sidewall extendingvertically from the SOI layer. The looped spacer may be adjacent to thefirst sidewall, the inner edge, and the second sidewall. The method mayinclude removing the first remaining portion of the mandrel and thesecond remaining portion of the mandrel. The method may include removingan exposed portion of the semiconductor layer. Removing the exposedportion of the semiconductor layer may form the looped fin below thelooped spacer. The method may include removing the looped spacer. Themethod may include forming a gate on a looped portion of the looped fin.

According to an embodiment, a structure is disclosed. The structure mayinclude a looped fin extending vertically from an upper surface of asubstrate. The looped fin may include a semiconductor material having acompressive stress. A looped portion of the looped fin may include afirst portion extending across the substrate in a first direction, asecond portion extending across the substrate in a second directionorthogonal to the first direction, and a third portion extending acrossthe substrate in a third direction parallel to the first direction. Thestructure may include a gate on the looped portion of the looped fin.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The following detailed description, given by way of example and notintended to limit the invention solely thereto, will best be appreciatedin conjunction with the accompanying drawings, in which not allstructures may be shown.

FIGS. 1A-1B are a top view and a cross section view taken along asection line A-A′ of a structure, respectively, according an embodimentof the present invention.

FIGS. 2A-2B are a top view and a cross section view taken along asection line A-A′ of removing a portion of a mandrel, respectively,according an embodiment of the present invention.

FIGS. 3A-3B are a top view and a cross section view taken along asection line A-A′ of forming a looped spacer adjacent to the mandrel,respectively, according an embodiment of the present invention.

FIGS. 4A-4B are a top view and a cross section view taken along asection line A-A′ of removing the mandrel, respectively, according anembodiment of the present invention.

FIGS. 5A-5B are a top view and a cross section view taken along asection line A-A′ of removing a portion of an SOI layer to form a loopedfin, respectively, according to an embodiment of the present invention.

FIGS. 6A-6B are a top view and a cross section view taken along asection line A-A′ of removing the looped spacer, respectively, accordingto an embodiment of the present invention.

FIGS. 7A-7B are a top view and a cross section view taken along asection line A-A′ of removing a fin in an inactive area, respectively,according an embodiment of the present invention.

FIGS. 8A-8B are a top view and a cross section view taken along asection line A-A′ of forming a gate around a fin, respectively,according an embodiment of the present invention.

FIGS. 9A-9B are a top view and a cross section view taken along asection line A-A′ of forming an insulating layer, respectively,according an embodiment of the present invention.

FIGS. 10A-10B are a top view and a cross section view taken along asection line A-A′ of forming a hardmask on the insulating layer and thegate, respectively, according an embodiment of the present invention.

FIGS. 11A-11B are a top view and a cross section view taken along asection line A-A′ of removing a portion of the gate, respectively,according an embodiment of the present invention.

FIGS. 12A-12B are a top view and a cross section view taken along asection line A-A′ of removing a portion of the fins, respectively,according an embodiment of the present invention.

FIGS. 13A-13B are a top view and a cross section view taken along asection line A-A′ of forming a confining layer, respectively, accordingan embodiment of the present invention.

The drawings are not necessarily to scale. The drawings are merelyschematic representations, not intended to portray specific parametersof the invention. The drawings are intended to depict only typicalembodiments of the invention. In the drawings, like numbering representslike elements.

DETAILED DESCRIPTION

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it can be understood that the disclosed embodiments aremerely illustrative of the claimed structures and methods that may beembodied in various forms. This invention may, however, be embodied inmany different forms and should not be construed as limited to theexemplary embodiments set forth herein. Rather, these exemplaryembodiments are provided so that this disclosure will be thorough andcomplete and will fully convey the scope of this invention to thoseskilled in the art.

For purposes of the description hereinafter, the terms “upper”, “lower”,“right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, andderivatives thereof shall relate to the disclosed structures andmethods, as oriented in the drawing figures. It will be understood thatwhen an element such as a layer, region, or substrate is referred to asbeing “on”, “over”, “beneath”, “below”, or “under” another element, itmay be present on or below the other element or intervening elements mayalso be present. In contrast, when an element is referred to as being“directly on”, “directly over”, “directly beneath”, “directly below”, or“directly contacting” another element, there may be no interveningelements present. Furthermore, the terminology used herein is for thepurpose of describing particular embodiments only and is not intended tobe limiting of the invention. As used herein, the singular forms “a,”“an,” and “the” are intended to include the plural forms as well, unlessthe context clearly indicates otherwise.

In the interest of not obscuring the presentation of embodiments of thepresent invention, in the following detailed description, someprocessing steps or operations that are known in the art may have beencombined together for presentation and for illustration purposes and insome instances may have not been described in detail. In otherinstances, some processing steps or operations that are known in the artmay not be described at all. It should be understood that the followingdescription is rather focused on the distinctive features or elements ofvarious embodiments of the present invention.

The present invention relates generally to microelectronics and moreparticularly, to a structure and method of retaining stress in fins offin field-effect transistors (finFETs). Intrinsic stress in a fin of afinFET may boost mobility of charge carriers, and thus, increaseperformance of the finFET. Cutting an intrinsically stressedsemiconductor layer to form fins may reduce the intrinsic stress in afin compared to the semiconductor layer. A reduction in stress fromcutting a fin may result in lost finFET performance.

Embodiments of the present invention provide a structure and method ofminimizing stress relaxation during fin formation. Embodiments mayinvolve forming a looped fin adjacent to at least a sidewall of amandrel. The mandrel may be removed, leaving the looped fin. Forming alooped fin around a mandrel and subsequently removing the mandrel mayreduce stress relaxation compared to conventional fin formation methods.Embodiments may include forming a gate over the looped fin. A method offorming fins while minimizing stress relaxation, is described below withreference to FIGS. 1A-13B. A method of forming looped fins is describedwith reference to FIGS. 1A-8B, and a method of forming a confining layeris described with reference to FIGS. 9A-13B.

Referring now to FIGS. 1A-1B, a top view and a cross section view takenalong a section line A-A′ of a structure 100 is shown, according anembodiment of the present invention. The structure 100 may include oneor more mandrels (e.g., mandrel 102, mandrel 104, mandrel 106, mandrel108, mandrel 110, and mandrel 112) on an upper surface of asemiconductor on insulator layer (hereinafter “SOT layer” or“substrate”).

The SOT layer may include a first semiconductor layer 122, a dielectriclayer 124, and a second semiconductor layer 126. The first semiconductorlayer 122 and the second semiconductor layer 126 may be composed of anysemiconductor material known in the art, including, for example,silicon, germanium, silicon-germanium alloy, silicon carbide,silicon-germanium carbide alloy, and compound (e.g. III-V and II-VI)semiconductor materials. Nonlimiting examples of compound semiconductormaterials include gallium arsenide, indium arsenide, and indiumphosphide. In a preferred embodiment, the first semiconductor layer 122may include silicon. The dielectric layer 124 may be composed of anydielectric material known in the art, including, for example, siliconoxide, silicon nitride, silicon oxynitride, SiBCN, SiOCN, or acombination of dielectric materials.

Still referring to FIG. 1, one or more mandrel (e.g., mandrel 102,mandrel 104, mandrel 106, mandrel 108, mandrel 110, and mandrel 112) maybe formed on an upper surface of the second semiconductor layer 126.Although six mandrels are shown in FIG. 1, it is understood that anynumber of mandrels may be used within the scope of the invention. Theone or more mandrels may be composed of any dielectric material known inthe art, including, for example, silicon oxide, silicon nitride, siliconoxynitride, SiBCN, SiOCN, or a combination of dielectric materials. Theone or more mandrels may have a first sidewall and a second sidewallthat are arranged at an angle (e.g., a non-zero angle) relative to theupper surface of the SOT layer. The first and second sidewalls may bearranged at different angles relative to the upper surface of the SOIlayer. For example, each mandrel may have a substantially trapezoidalshape in cross section.

The one or more mandrels may be formed using conventional processingtechniques, such as deposition, masking, and etching. For example, anynumber of mandrels may be simultaneously formed by first forming a layerof mandrel material, e.g., a layer of silicon dioxide formed usingchemical vapor deposition (CVD) on the second semiconductor layer 126.Then a photomask may be provided by forming a layer of photoresistmaterial on the layer of mandrel material, exposing the photoresistmaterial to a pattern of light, and developing the exposed photoresistmaterial. An etching process, such as a reactive ion etch (RIE), maythen be used to form patterns (e.g., openings) in the layer of mandrelmaterial by removing portions of the layer of mandrel material that arenot covered by the photomask. After etching, the photomask may beremoved using a conventional ashing or stripping process. The un-etchedportions of the layer of mandrel material that remain after the maskingand etching form the one or more mandrels. The one or more mandrels maybe formed with angled sidewalls (e.g., a substantially trapezoidalshape) by using a tapered resist profile (e.g., with a half-tone mask,or by intentionally eroding portions of the resist prior to or duringthe etching step).

Referring now to FIGS. 2A-2B, a top view and a cross section view takenalong a section line A-A′ of removing a portion of at least one mandrelis shown, according an embodiment of the present invention. In anembodiment, one or more portions may be removed from one or moremandrels. For example, the portion 236 may be removed from the mandrel106, the portion 238 may be removed from the mandrel 108, the portion240 may be removed from the mandrel 110, and the portion 242 may beremoved from the mandrel 112. The one or more portions may be removedfrom the one or more mandrels using any material removal method known inthe art, such as, for example, masking and etching, photolithography, ora combination thereof.

In an embodiment, removing the one or more portions may form an inneredge a mandrel. For example, removing the portion 236 may form an inneredge 246 of the mandrel 106, removing the portion 238 may form an inneredge 248 of the mandrel 108, removing the portion 240 may form an inneredge 250 of the mandrel 110, and removing the portion 242 may form aninner edge 252 of the mandrel 112.

In an embodiment, removing the one or more portions from the one or moremandrels may leave an inactive mandrel in an inactive area of a wafer.For example, one or more inactive mandrels may be left in an inactivearea near an outer edge of a wafer. In an example, removing the one ormore portions from the one or more mandrels may leave inactive mandrel206, inactive mandrel 208, inactive mandrel 210, and inactive mandrel212. It should be appreciated that embodiments of forming activemandrels on each side of a removed portion are contemplated.

Referring now to FIGS. 3A-3B, a top view and a cross section view takenalong a section line A-A′ of forming one or more looped spacers adjacentto one or more mandrels is shown, according an embodiment of the presentinvention. Each looped spacers may be formed on an upper surface of theSOI layer (e.g. on an upper surface of the second semiconductor layer126) and adjacent to a sidewall of a mandrel. The one or more loopedspacers may be formed by any conventional formation method, such as, forexample, by deposition adjacent to the mandrels or chemical reaction ofthe mandrels. Nonlimiting examples of deposition techniques for formingthe one or more looped spacers include sidewall image transfer (SIT),rapid thermal chemical vapor deposition (RTCVD), low-energy plasmadeposition (LEPD), ultra-high vacuum chemical vapor deposition (UHVCVD),atmospheric pressure chemical vapor deposition (APCVD), and molecularbeam epitaxy (MBE). In an embodiment, etching may be used to removeexcess material on horizontal surfaces, leaving only the looped spacerson the sidewalls of the mandrels.

In an embodiment, non-looped spacers (e.g. spacer 302, spacer 352,spacer 304, and spacer 354) may be formed adjacent to the mandrel 102and the mandrel 104 and looped spacers (e.g. spacer 306, spacer 308,spacer 310, and spacer 312) may be formed around the mandrel 106, themandrel 108, the mandrel 110, and the mandrel 112. The spacer 302 andthe spacer 352 may be formed on an upper surface of the secondsemiconductor layer 126 and adjacent to the mandrel 102. The spacer 304and the spacer 354 may be formed on an upper surface of the secondsemiconductor layer 126 and adjacent to the mandrel 104. The spacer 306may be formed on an upper surface of the second semiconductor layer 126and adjacent to more than one sidewall of the mandrel 106. The spacer308 may be formed on an upper surface of the second semiconductor layer126 and adjacent to more than one sidewall of the mandrel 108. Thespacer 310 may be formed on an upper surface of the second semiconductorlayer 126 and adjacent to more than one sidewall of the mandrel 110. Thespacer 312 may be formed on an upper surface of the second semiconductorlayer 126 and adjacent to more than one sidewall of the mandrel 112.

In an embodiment, the spacer 306, the spacer 308, the spacer 310, andthe spacer 312 may be adjacent to a sidewall on more than one side of amandrel and around an inner edge of the mandrel. For example, the spacer306 may be adjacent to and in contact with a first sidewall of themandrel 106, the inner edge 246, and a second sidewall of the mandrel106. The spacer 308 may be adjacent to and in contact with a firstsidewall of the mandrel 108, the inner edge 248, and a second sidewallof the mandrel 108. The spacer 310 may be adjacent to and in contactwith a first sidewall of the mandrel 110, the inner edge 250, and asecond sidewall of the mandrel 110. The spacer 312 may be adjacent toand in contact with a first sidewall of the mandrel 112, the inner edge252, and a second sidewall of the mandrel 112. Embodiments of a spacerformed around a first sidewall, a first inner edge, a second sidewall,and a second inner edge are contemplated. A spacer formed around a firstsidewall, at least an inner edge, and a second sidewall may be referredto as, for example, a “u-shaped spacer”, a “loop spacer”, or a “loopedspacer”.

In embodiment, inactive spacer may be formed around two sides and aninner edge of the inactive mandrel 206, the inactive mandrel 208, theinactive mandrel 210, and the inactive mandrel 212. The spacer 356 maybe adjacent to and in contact with a first sidewall of the inactivemandrel 206, an inner edge of the inactive mandrel 206, and a secondsidewall of the inactive mandrel 206. The spacer 358 may be adjacent toand in contact with a first sidewall of the inactive mandrel 208, aninner edge of the inactive mandrel 208, and a second sidewall of theinactive mandrel 208. The spacer 360 may be adjacent to and in contactwith a first sidewall of the inactive mandrel 210, an inner edge of theinactive mandrel 210, and a second sidewall of the inactive mandrel 210.The spacer 360 may be adjacent to and in contact with a first sidewallof the inactive mandrel 210, an inner edge of the inactive mandrel 210,and a second sidewall of the inactive mandrel 210. The spacer 362 may beadjacent to and in contact with a first sidewall of the inactive mandrel212, an inner edge of the inactive mandrel 212, and a second sidewall ofthe inactive mandrel 212. It should be appreciated that embodiments offorming active fins adjacent to each side of a removed portion (e.g.portion 236 of FIG. 2A) are contemplated. For example, embodimentsinvolving removing a portion 236 to form two active mandrels and formingactive spacers (to form active fins in FIG. 5A-5B) on each activemandrel are contemplated.

Referring now to FIGS. 4A-4B, a top view and a cross section view takenalong a section line A-A′ of removing one or more mandrels is shown,according an embodiment of the present invention. The one or moremandrels may be removed using a conventional removal process, such as,for example, an etch selective to the mandrel material. For example, ifthe one or more mandrels are composed of silicon dioxide, an etchant maybe selective to silicon dioxide. In a preferred embodiment, the etchantmay display high selectivity of a material of the mandrel over amaterial of an upper layer of the SOI layer. For example, if themandrels are composed of silicon nitride and an upper layer of the SOIlayer is composed of silicon dioxide, an etchant that is highlyselective of silicon nitride over silicon dioxide (e.g., a plasmachemical dry etch) may be used.

In an embodiment, the mandrel 102, the mandrel 104, the mandrel 106, themandrel 108, the mandrel 110, the mandrel 112, the inactive mandrel 206,the inactive mandrel 208, the inactive mandrel 210, and the inactivemandrel 212 may be removed. The one or more spacers may remain on anupper surface of the SOI layer. The spacer 306, the spacer 308, thespacer 310, the spacer 312, the spacer 356, the spacer 358, the spacer360, and the spacer 362 may have a u-shaped or a looped structure.

Referring now to FIGS. 5A-5B, a top view and a cross section view takenalong a section line A-A′ of removing a portion of the SOI layer to forma looped fin is shown, according to an embodiment of the presentinvention. An exposed portion of the second semiconductor layer 126(FIG. 4A-4B) may be removed using any material removal process known inthe art, such as, for example, photolithography and/or RIE. The exposedportion of the second semiconductor layer 126 may be any portion of thesecond semiconductor layer 126 that is not covered by one or morespacers (e.g. spacer 302, spacer 304, spacer 306, spacer 308, spacer310, spacer 312, spacer 352, spacer 354, spacer 356, spacer 358, spacer360, and spacer 362). By removing the exposed portion of the secondsemiconductor layer 126, one or more fins may be formed. A spacer may beused as a hardmask to pattern fins into a particular shape. A fin may bepatterned into a same shape as a spacer above the fin (e.g., fins formedunder looped spacers may be looped fins). In an example, a looped finmay be formed under the spacer 306, the spacer 308, the spacer 310, thespacer 312, the spacer 356, the spacer 358, the spacer 360, and thespacer 362. Non-looped fins may be formed under non-looped spacers, suchas, for example, the spacer 302, the spacer 304, the spacer 352, and thespacer 354. In an embodiment, a looped fin may have at least one loopedportion. For example, a looped fin under the spacer 306 may have alooped portion on one end closest to the spacer 356 and a non-loopedportion (not shown) on another end furthest from the spacer 356. Thenon-looped portion may have a free surface which may be secured by aconfining layer, discussed below with reference to FIGS. 9A-13B. In anexample, a looped fin may have more than one looped portion. Forexample, a looped fin under the spacer 306 may have a looped portion atan end closest to the spacer 356 and another looped end (not shown)furthest from the spacer 356. It must be appreciated that “looedportion” as used within the present disclosure, refers to the areaconnecting the non-looped portions. In an embodiment, spacer 310contains the non-looped portions of 311A and 311B and the looped portionof 311C. In this embodiment, “looped portion” refers to the u-shapevertical piece connecting the two non-looped portions. In otherembodiments, the looped portion may be curved or connecting twohorizontal pieces.

Referring now to FIGS. 6A-6B, a top view and a cross section view takenalong a section line A-A′ of removing the looped spacer is shown,according to an embodiment of the present invention. The one or morespacers may be removed using a conventional material removal process,such as, for example, an etch selective to a material of the one or morespacers. Removing the one or more spacers may expose the one or morefins below the one or more spacers. For example, by removing the spacer306 (FIG. 5A), a looped fin below the spacer 306 may be exposed.

Referring now to FIGS. 7A-7B, a top view and a cross section view takenalong a section line A-A′ of removing one or more fins in an inactivearea 730 is shown, according an embodiment of the present invention. Inan embodiment, the inactive area 730 may be inactive due to a proximityto an outer edge of a wafer. One or more fins in the inactive area 730may be removed. The one or more fins may be removed using any materialremoval process known in the art, such as, for example, masking andetching, photolithography, or a combination thereof.

In an embodiment, the inactive area 730 may be an active area and theone or more fins may be retained. For example, the one or more fins inthe active area may be used to form one or more transistors. In anotherembodiment, the inactive area 730 may be an inactive area and the one ormore fins may be retained. For example, the one or more fins in theinactive area 730 may be retained and dummy transistors may be formedusing the one or more fins in the inactive area 730.

Referring now to FIGS. 8A-8B, a top view and a cross section view takenalong a section line A-A′ of forming one or more gates on an uppersurface of the dielectric layer 124 and around one or more fins isshown, according an embodiment of the present invention. The one or moregates may include, for example, the gate 820, the gate 822, and the gate824. The gate 822 may be formed over a looped portion of one or morelooped fins. The looped portion of one or more fins under a gate may bereferred to as a “looped portion”, “curved portion”, “tucked portion” orany combination thereof. A gate over the looped portion of a fin maysecure the looped portion in position. Securing the looped portion inposition may decrease stress relaxation in the fin.

A gate may be formed on an upper surface of the SOI layer and over aportion of the fins. The gate may have a height ranging fromapproximately 40 nm to approximately 200 nm, preferably ranging fromapproximately 50 nm to approximately 150 nm. The gate may include a gatedielectric layer (not shown) on the fins and a gate electrode (notshown) on the gate dielectric layer that may be formed via any knownprocess in the art, including a gate-first process and a gate-lastprocess.

In a gate-first process, the gate dielectric layer may include anysuitable insulating material including, but not limited to: oxides,nitrides, oxynitrides or silicates including metal silicates andnitrided metal silicates. In one embodiment, the gate dielectric mayinclude a high-k oxide such as, for example, silicon oxide(Si_(x)O_(y)), hafnium oxide (Hf_(x)O_(y)), zirconium oxide(Zr_(x)O_(y)), aluminum oxide (Al_(x)O_(y)), titanium oxide(Ti_(x)O_(y)), lanthanum oxide (La_(x)O_(y)), strontium titanium oxide(Sr_(x)Ti_(y)O_(z)), lanthanum aluminum oxide (La_(x)Al_(y)O_(z)), andmixtures thereof. The gate dielectric layer may be deposited over thefins using any suitable deposition technique known the art, including,for example, atomic layer deposition (ALD), chemical vapor deposition(CVD), physical vapor deposition (PVD), molecular beam deposition (MBD),pulsed laser deposition (PLD), or liquid source misted chemicaldeposition (LSMCD). The gate electrode may be made of gate conductormaterials including, but not limited to, zirconium, tungsten, tantalum,hafnium, titanium, aluminum, ruthenium, metal carbides, metal nitrides,transition metal aluminides, tantalum carbide, titanium carbide,tantalum magnesium carbide, or combinations thereof. The gate electrodemay be formed using any suitable metal deposition technique, including,for example, CVD, PVD, and ALD, sputtering, and plating.

In a gate-last process, the gate may include a sacrificial gate that maybe later removed and replaced by a gate dielectric layer and a gateelectrode such as those of the gate-first process described above. In anexemplary embodiment, the sacrificial gate may be made of a polysiliconmaterial with a sacrificial dielectric material (e.g., silicon oxide)formed using any deposition technique known in the art, including, forexample, ALD, CVD, PVD, MBD, PLD, LSMCD, sputtering, and plating. Othersuitable materials and methods of forming a sacrificial gate are knownin the art.

Referring now to FIGS. 1A-8B, embodiments of forming the structure 100are shown. A method of forming fin field-effect transistor with a loopedfin (e.g. the structure 100) may include forming a looped spacer (e.g.,spacer 306) around a first portion of a mandrel (e.g. mandrel 106) on anupper surface of a substrate (e.g., the SOI layer). The looped spacermay be adjacent to a first sidewall of the first portion of the mandrel,an inner edge (e.g., inner edge 246) of the first portion of themandrel, and a second sidewall of the first portion of the mandrel. Themethod may include removing the first portion of the mandrel (e.g., asin FIGS. 4A-4B). The method may include removing an exposed portion ofthe substrate (e.g., as in FIGS. 5A-5B). Removing the exposed portion ofthe substrate may forms a looped fin below the looped spacer (e.g., asin FIGS. 5A-5B). The method may include removing the looped spacer(e.g., as in FIGS. 6A-6B). The method may include forming a gate on theupper surface of the substrate and on a looped portion of the looped fin(e.g., as in FIGS. 8A-8B).

The structure 100 may include u-shaped and/or loop shaped fins.Embodiments include forming a looped fin around a mandrel with a portionremoved. Embodiments include forming a looped fin around a mandrel withtwo portions removed. Embodiments include removing a remaining portionof a mandrel and leaving the u-shaped and/or looped fin on an uppersurface of the SOI layer. Fins having a u-shape and/or a loop shape mayhave less stress relaxation than conventional fins. Conventional finsmay have a free surface on each end which may result in greaterrelaxation. Looped fins may not have a free surface from whichrelaxation may propagate. Embodiments may include forming a gate over alooped portion (i.e. curved portion) of a u-shaped and/or a looped fin.A gate over a looped portion of a fin may secure the looped portion in aposition. Securing a looped portion in a position may decrease stressrelaxation in the fin. Thus, looped fins with a curved portion of thelooped fins under a gate may have substantially reduced stressrelaxation compared to conventional fins.

A method of forming a confining layer is described below, with referenceto FIGS. 9A-13B.

Referring now to FIGS. 9A-9B, a top view and a cross section view takenalong a section line A-A′ of forming an insulating layer 902 is shown,according an embodiment of the present invention. The insulating layermay be formed between one or more gates (e.g. between the gate 820 andthe gate 822, between the gate 822 and the gate 824, etc.). Theinsulating layer 902 may insulate one or more components from othercomponents, such as, for example, insulate the gate 820 from acapacitance from the gate 822. The insulating layer 902 may be formedusing a conventional masking and etching process. The insulating layer902 may be composed of any dielectric material known in the art,including, for example, silicon oxide, silicon nitride, siliconoxynitride, SiBCN, SiOCN, or a combination of dielectric materials.

Referring now to FIGS. 10A-10B, a top view and a cross section viewtaken along a section line A-A′ of forming a hardmask 1002 on theinsulating layer 902 and one or more gates (e.g., the gate 820, the gate822, and the gate 824) is shown, according an embodiment of the presentinvention. The hardmask may be formed using a conventional depositionprocess. The hardmask 1002 may be composed of any dielectric materialknown in the art, including, for example, silicon oxide and siliconnitride. The hardmask 1002 may have one or more openings leaving one ormore areas exposed underneath. For example, the hardmask 1002 may havean opening leaving a portion of the gate 824 exposed.

Referring now to FIGS. 11A-11B, a top view and a cross section viewtaken along a section line A-A′ of removing the exposed portion of thegate 824 (FIGS. 10A-10B) is shown, according an embodiment of thepresent invention. The exposed portion of the gate 824 may be removedusing any conventional material removal process, such as, for example,an etching process selective to a material of the gate 824 or RIE. Aprocess of removing the exposed portion of the gate 824 may leave aportion of one or more fins exposed. For example, a portion of one ormore fins below the opening in the hardmask 1002 may be exposed (i.e. avisible portion of one or more fins formed from the second semiconductorlayer 126 in FIG. 11A).

Referring now to FIGS. 12A-12B, a top view and a cross section viewtaken along a section line A-A′ of removing a portion of the fins (e.g.,a portion of the one or more fins below the opening in the hardmask1002) is shown, according an embodiment of the present invention. Theportion of the fins below the opening in the hardmask 1002 may beremoved using a conventional material removal process, such as, forexample, an etch selective to a material of the fins or RIE.

Referring now to FIGS. 13A-13B, a top view and a cross section viewtaken along a section line A-A′ of removing the hardmask 1002 (FIGS.10A-10B) and forming a confining layer 1302 is shown, according anembodiment of the present invention. The hardmask 1002 may be removedusing a conventional removal process, such, as for example, a etchselecting to a material of the hardmask 1002. The confining layer 1302may be formed using any deposition technique known in the art,including, for example, ALD, CVD, PVD, MBD, PLD, LSMCD, sputtering, andplating. The confining layer 1302 may be composed of any dielectricmaterial known in the art, including, for example, silicon oxide,silicon nitride, silicon oxynitride, SiBCN, SiOCN, or a combination ofdielectric materials. The confining layer 1302 may restrict movement ofone or more fins by acting as a physical barrier. By restrictingmovement of one or more fins, the confining layer 1302 may reduce stressrelaxation in the one or more fins.

Various embodiments of forming looped fin(s) and/or confining layer(s)to reduce stress relaxation are contemplated. In an embodiment, a loopedfin and a confining layer may be formed on separate fins. In anembodiment, a looped fin may include a confining layer on one end. Forexample, a fin may be in a “u-shaped” so that it has a looped end and anopposite end with a confining layer restricting movement of a non-loopedend. In an embodiment, a fin may have two looped ends with a confininglayer adjacent to each looped end. In an embodiment, a fin may not havea looped end and a confining layer adjacent to each non-looped end.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiment, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed is:
 1. A method of forming fin field-effect transistorwith a fin comprising: forming first and second spacers around a firstmandrel and a second mandrel, respectively, on an upper surface of asubstrate, wherein the first spacer is adjacent to a first sidewall ofthe first mandrel and the second spacer is adjacent to a first sidewallof the second mandrel, wherein the first sidewall of the first mandrelextends in a first direction and a second sidewall of the first mandrelextends in a second direction; removing the first mandrel and the secondmandrel; removing an exposed portion of the substrate, wherein theremoving the exposed portion of the substrate forms a first finunderneath the first spacer and a second fin below the second spacer,wherein the first fin and the second fin each comprise a first portionextending in the first direction, and wherein the first fin comprises asecond portion extending in the second direction and a third portionextending in the first direction, wherein the second portion connectsthe first portion of the first fin to the third portion of the firstfin, and wherein the first fin and the second fin are not contiguous;removing the spacer; and forming a gate extending in the seconddirection on the second portion of the first fin and the second fin,wherein the gate maintains a compressive stress of the second portion ofthe first fin; removing a portion of the second fin; and depositing aconfining layer abutting the second fin, wherein the confining layermaintains a compressive stress of the second fin.
 2. The method of claim1, wherein the confining layer is parallel to at least a portion of thefirst fin.
 3. A method of forming fin field-effect transistor with a fincomprising: forming a first fin from an upper surface of a substrate,wherein the first fin comprises a first portion extending in a firstdirection and a second portion extending in a second direction and athird portion extending in the first direction, wherein the secondportion connects the first portion of the first fin to the third portionof the first fin; forming a second fin from the upper surface of thesubstrate, wherein the second fin comprises a first portion extending inthe first direction, wherein the first fin and the second fin are notcontiguous; forming a gate extending in the second direction over thesecond portion of the first fin and the second fin, wherein at least aportion of the second portion of the fin is under the gate, and whereinthe gate maintains a compressive stress of the second portion of thefirst fin; removing a portion of the second fin; and depositing aconfining layer abutting the second fin, wherein the confining layermaintains a compressive stress of the second fin.
 4. The method of claim3, wherein the confining layer is parallel to at least a portion of thefirst fin.
 5. The method of claim 3, further comprising: forming anothergate on the upper surface of the substrate and the first fin.
 6. Themethod of claim 3, wherein the confining layer is perpendicular to thesecond fin, wherein the second fin comprises one or more free surfaces.